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Abstract Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic phase shifting and modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in Al_0.80Sc_0.20N-based phase shifters. We utilized the TM0 mode, allowing use of ther₃₃electro-optic coefficient, and demonstratedV_πLaround 750 V cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics. 

Abstract Integrated phononics plays an important role in both fundamental physics and technology. Despite great efforts, it remains a challenge to break time-reversal symmetry to achieve topological phases and non-reciprocal devices. Piezomagnetic materials offer an intriguing opportunity as they break time-reversal symmetry intrinsically, without the need for an external magnetic field or an active driving field. Moreover, they are antiferromagnetic, and possibly compatible with superconducting components. Here, we develop a theoretical framework that combines linear elasticity with Maxwell’s equations via piezoelectricity and/or piezomagnetism beyond the commonly adopted quasi-static approximation. Our theory predicts and numerically demonstrates phononic Chern insulators based on piezomagnetism. We further show that the topological phase and chiral edge states in this system can be controlled by the charge doping. Our results exploit a general duality relation between piezoelectric and piezomagnetic systems, which can potentially be generalized to other composite metamaterial systems. 

Silicon photonics has enabled large-scale production of integrated optical devices for a vast array of applications. However, extending its use to nonlinear devices is difficult since silicon does not exhibit an intrinsic second-order nonlinearity. While heterogeneous integration of strongly nonlinear materials is possible, it often requires additional procedures since these materials cannot be directly grown on silicon. On the other hand, CMOS-compatible materials often suffer from weaker nonlinearities, compromising efficiency. A promising alternative to current material platforms is scandium-doped aluminum nitride (Al1−xScxN), which maintains the CMOS compatibility of aluminum nitride (AlN) and has been used in electrical devices for its enhanced piezoelectricity. Here, we observe enhancement in optical second-order susceptibility (χ(2)) in CMOS-compatible Al1−xScxN thin films with varying Sc concentrations. For Al0.64Sc0.36N, the χ(2) component d33 is enhanced to 62.3 ± 5.6 pm/V, which is 12 times stronger than intrinsic AlN and twice as strong as lithium niobate. Increasing the Sc concentration enhances both χ(2) components, but loss increases with a higher Sc concentration as well, with Al0.64Sc0.36N exhibiting 17.2 dB/cm propagation loss at 1550 nm and Al0.80Sc0.20N exhibiting 8.2 dB/cm at 1550 nm. Since other material properties of this alloy are also affected by Sc, tuning the Sc concentration can balance strong nonlinearity, loss, and other factors depending on the needs of specific applications. As such, Al1−xScxN could facilitate low cost development of nonlinear integrated photonic devices.